radiation hardended, solid-state relay with buffered inputs www.irf.com 1 10/26/04 description features: total dose capability to 100krad(si) optically coupled 1000v dc input to output isolation buffered input stage 5.0v compatible logic level input controlled switching times hermetically sealed package RDHA710SE10A2QK dual 100v, 10a 8-pin surface mount for notes, please refer to page 3 the RDHA710SE10A2QK is a radiation hardened dual solid-state relay in a hermetic package. it is configured as a dual, single-pole-single-throw (spst) normally open relay with common input supply. this device is characterized for 100 krad(si) total ionizing dose. the input and output mosfets utilize international rectifier?s r5 technology. the RDHA710SE10A2QK is optically coupled and actuated by standard logic inputs. product summary part breakdown current tr / tf logic drive number volta g evolta g e RDHA710SE10A2QK 100v 10a controlled 5.0v absolute maximum ratings per channel @ tj=25c (unless otherwise specified) parameter s y mbol value units output supply voltage v s 100 v output current i o 20 a input buffer voltage - (pins 4 & 6) v in 10 v input buffer current i in 10 ma input supply voltage (pin 5) v dd 10 v input supply current i dd 25 ma power dissipation p diss 60 w operating temperature range t j -55 to +125 storage temperature range t s -65 to +150 c lead temperature t l 300 pd - 95876
2 www.irf.com RDHA710SE10A2QK for notes, please refer to page 3 pre-irradiation electrical characteristics per channel @ -55c t c +125c (unless otherwise specified) parameter group a test conditions s y mbol min. t y p. max. units sub g roups 1 v in = 5.0v -- 0.070 0.100 2 v dd = 5.0v, i o = 10a -- 0.115 0.145 input buffer threshold voltage v dd = 5.0v, i o = 10a v in(th) 4.5 -- -- v 1 v in = 0.8v, v s = 100v -- -- 25 2 v in = 0.8v, v s = 80v -- -- 250 v dd = 5.0v, i o = 10a -- 10 15 v dd = 10v, i o = 10a -- -- 25 1 -- -- 1.0 2,3 -- -- 3.0 a input-to-output leakage current 1 v i-o = 1.0kvdc, dwell = 5.0s i i-o -- -- 1.0 v in =5.0v, v dd =5.0v, v s =30v rc = 7.0 ? / 100 ? /100 ? / 100 ? /100 f, pw = 50ms v in = 0.8v, f = 1.0mhz, v s =25v t c = 25c thermal resistance v in = 5.0v, v dd = 5.0v , r thjc -- -- 1.7 c/w mtbf (per channel) mil-hdbk-217f, sf@tc= 25c 6.0 -- -- mhrs 25 t on 10 t off -- t r fall time , t f 1,2,3 pf 365 -- 5.5 ms -- 6.5 26 -- 6.0 rise time , 1,2,3 -- 1.3 ma i dd input supply current output capacitance c oss -- 1,2,3 turn-on delay 1,2,3 turn-off delay output on-resistance r ds(on) ? output leakage current i o a input buffer current v in = 5.0v i in 50
www.irf.com 3 RDHA710SE10A2QK notes for maximum ratings and electrical characteristic tables specification is guaranteed by design rise and fall times are controlled internally inputs protected for v in < 1.0v and v in > 7.5v optically coupled solid state relays (ssrs) have relatively slow turn on and turn off times. care must be taken to insure that transient currents do not cause violation of soa. if transient conditions are present, ir recommends a complete simulation to be performed by the end user to insure compliance with soa requirements as specified in the irhnj57130 data sheet while the ssr design meets the design requirements specified in mil-prf-38534, the end user is responsible for product derating, as required for the application reference figures 3 & 4 for switching test circuits and wave form input supply voltage shall not exceed 5.25v@tc 70c total dose irradiation with input bias. 10ma i dd applied and v ds = 0 during irradiation total dose irradiation with output bias. 80 volts v ds applied and i dd = 0 during irradiation post total dose irradiation , , electrical characteristics per channel @ 25c (unless otherwise specified) parameter group a test conditions s y mbol min. t y p. max. units sub g roups output on-resistance 1 v in = 5.0v, v dd = 5.0v, i o = 10a r ds(on) -- 0.070 0.100 ? output leakage current 1 v in = 0.8v, v s = 100v i o -- -- 25 input buffer current 1 v in = 5.0v i in -- -- 1.0 v in =5.0v, v dd =5.0v, v s =30v rc = 7.0 ? / 100 ? /100 ? / 100 ? /100 f, pw = 50ms t on 10 t off -- t r fall time t f -- 6.0 1 a 1 turn-on delay 1 turn-off delay ms -- 6.5 26 25 50 rise time 1--1.35.5 international rectifier does not currently have a dscc certified radiation hardness assurance program
4 www.irf.com RDHA710SE10A2QK radiation performance international rectifier radiation hardened mosfets are tested to verify their hardness capability. the hardness assurance program at ir uses a cobalt-60 ( 60 co) source and heavy ion irradiation. both pre- and post- irradiation performance are tested and specified using the same drive circuitry and test conditions to provide a direct comparision. opto isolation opto isolation
fig 2: typical application fig 1: maximum drain current vs case temperature 0 5 10 15 20 25 25 50 75 100 125 150 t c , case temperature (c) i d , drain current (a)
www.irf.com 5 RDHA710SE10A2QK uf fig 4: switching test waveform fig 3: switching test circuit (only one channel shown)
6 www.irf.com RDHA710SE10A2QK world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 252-7105 ir leominster: 205 crawford st., leominster, massachusetts 01453, tel: (978) 534-5776 data and specifications subject to change without notice. 10/2004 case outline and dimensions ? 8-pin surface mount package part numbering nomenclature notes 1. dimensioning and tolerancing per asme y14.5sm-1994 2. controlling dimension: inch 3. dimensions are shown in inches 4. tolerances are +/- 0.005 uos pin assi g nment pin # pin description 1out 1 + 2out 1 - 3 input gnd 4input 1 5 v dd 6input 2 7out 2 - 8out 2 + rd h a 7 10 se 10 a 2 q k current 10 = 10a device type rd = dc solid state relay radiation characterization h = rad hard generation a = current design radiation level 7 = 100k rad (si) package se = 8-pin surface mount screening level k = class k per mil-prf-38534 features q = 5.0 volt buffered controlled poles 2 = double pole volts 10 = 100 volts throw configuration a = single throw, normally open
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